List of Publications to International Scientific Journals,

(Peer-reviewing system), by Y. S. Raptis, (Assoc Prof. NTUA)

 

1. Effects of temperature gradients on the first-order Raman spectrum of Si. J. .Raptis, E. Liarokapis, and E. Anastassakis - Appl. Phys. Lett. 44, 125-127 (1984).

2. Angular dispersion of "backward" Raman scattering: Weakly absorbing cubic materials (Si). E.Anastassakis and Y.S.Raptis-J.Appl.Phys. 57, 920-928 (1985)

3. Temperature rise induced by a cw laser beam revisited. E.Liarokapis and Y.S.Raptis - J. Appl. Phys. 57, 5123-5126 (1985).

4. Raman and Infrared Spectra of Tellurium Sub-Bromide (Te2Br). E. Anastassakis, J. S. Raptis, and W. Richter - phys. stat. sol.(b) 130, 161-168 (1985).

5.Angular dispersion of "backward" Raman scattering: Absorbing cubic materials (Ge). A. Anastassiadou, Y .S. Raptis, and E. Anastassakis - J. Appl. Phys.59, 627-631 (1986).

6.Angular dispersion of "backward" Raman scattering: Absorbing III-V semiconductors (GaAs). A.Anastassiadou,Y.S.Raptis,and E.Anastassakis - J. Appl. Phys. 60, 2924-2931 (1986).

7. Raman study of SrF2 under uniaxial Stress. A. D. Papadopoulos, Y. S. Raptis and E. Anastassakis - Solid State Communications, 58, 645-648 (1986).

8. Anharmonic effects in Mg2X (X=Si,Ge,Sn) compounds studied by Raman spectroscopny. Y S. Raptis, G. A. Kourouklis, E. Anastassakis, E. Haro-Poniatowski and M.Balkanski, - J. Physique, 48, 239-245 (1987).

9. Raman and infrared phonon piezospectroscopy in InP. E. Anastassakis and Y.S. Raptis, M. Hunermann and W. Richter, and M. Cardona - Phys. Rev. B38, 7702-7709 (1988).

10. Tempereture dependence of long-wavelength optical phonons in AlSb. Y.S. Raptis and E. Anastassakis - Solid State Commun. 76, 335-338(1990).

11. Raman spectroscopic study of PrS. E. Anastassakis and Y.S Raptis - Festchrift in Honor of R.C. Leite, Eds. M. Balkanski, C.E.T.G. da Silva, M. Worlock, World Scientific, Singapore 1991, pp. 77-82.

12. Short-range order and microstructure in hydrogenated amorphous silicon. P. Danesh, B. Pantchev, I. Savatinova, E. Liarokapis and Y.S. Raptis - J. Appl. Phys. 69, 7656-7659 (1991).

13. Vibrational modes, optical excitations, and phase transition of solid C60 at high pressures. D.W. Snoke, Y.S. Raptis, and K. Syassen - Phys. Rev. B45, 14419-14422 (1992).

14. Arsenic passivation of MBE grown GaAs(100):structural and electronic properties of the decapped surfaces. U. Resch, N. Esser, Y.S. Raptis, W. Richter, J. Wasserfall, A. Foster and D.I. Westwood - Surface Science 269/270, 797-803 (1992).

15. Pressure dependence of zone-boundary phonons of AlSb. Y. S. Raptis and K. Syassen - High Pressure Research, 9/10, 31-35 (1992).

16. Raman study of C60/C70 under pressure. Y. S. Raptis, D.W. Snoke, K. Syassen, S. Roth, P. Bernier and A. Zahab - High Pressure Research, 9/10, 41-46 (1992).

17. Second-order Raman scattering in AlSb. Y.S. Raptis, E. Anastassakis and G. Kanellis - Phys. Rev. B, 46, 15801-15811 (1992).

18. Stabilized Cubic Zirconia: A Raman Study under Uniaxial Stress. Jinguang Cai,Y. S. Raptis and E. Anastassakis - Appl. Phys. Letters, 62, 2781 (1993).

19. XRD and Raman studies of low-temperature-grown GaAs epilayers. M. Calamiotou, Y.S. Raptis and E. Anastassakis, M. Lagadas and Z. Hatzopoulos - Solid State Commun, 87, 563 (1993).

20. Temperature dependence of Raman scattering in Stabilized Cubic Zirconia. J. Cai, C. Raptis, Y.S. Raptis, E. Anastassakis - Phys. Rev. B 51, 201-210 (1995).

21. Folded phonons from lateral periodicity in (311) GaAs/AlAs corrugated superlattices. Z.V. Popovic, M.B. Vukmirovic, and Y.S. Raptis, E. Anastassakis, R. Notzel, K. Ploog - Phys. Rev. B 52 (8), 5789-94 (1995).

22. Optical Studies of ZnSe-Zns/GaAs(100) Single Quantum Wells grown by Photo-assisted Vapur Phase Epiraxy. V.V. Tishchenko, Y.S. Raptis, and E. Anasstassakis, N.V. Bondar - Solid State Communications, 96 (10), 793-98 (1995).

23. Interference patterns under normal incidence in birefringent, optically active plane parallel plates, T.D. Wen, Y.S. Raptis, E. Anastassakis, I.J. Lalov, A.I. Miteva - J. Phys. D : Appl. Phys., 28, 2128-34 (1995).

24. Surface-related phonon mode in porous GaP. I.M. Tiginyanu and V.V. Ursaki, V.A. Karavanskii and V.N. Sokolov, and Y.S. Raptis and E. Anastassakis - Solid State Communications, 97, 675-678 (1996).

25. Raman scattering study of ZnInGaS4 and CdInGaS4 under hydrostatic pressure. E. Anastassakis, Y.S. Raptis, Sh. Ando, T. Irie, V.V. Ursaki, I.M. Tiginyanu, S.I. Radautsan, I. I. Burlakov - Cryst. Res. Technol., 31, 365-368 (1996).

26. Pressure induced phase transition in MgInGaS4. I.M. Tiginyanu, Y.S. Raptis, V.V. Ursaki, E. Anastassakis, I.I. Burlakov - Cryst. Res. Technol., 31, 777-780 (1996).

27. Two-wave and induced three-wave mixing in thin holograms. P.M. Petrov, V.M. Petrov, Y.S. Raptis, L.P. Xu, E. Anastassakis - J. Appl. Phys., 79, 2846-2852 (1996).

28. Interference patterns under oblique incidence in birefringent optically active plane-parallel plates. A.I. Miteva, I.J. Lalov, T. Wen, Y.S. Raptis and E. Anastassakis - J. Phys. D : Appl. Phys. 29, 2705-2713 (1996).

29. Order-disorder phase transition in CdAl2S4 under hydrostatic pressure. I. I. Burlakov, Y. S. Raptis, V.V. Ursaki, E. Anastassakis and I.M. Tiginyanu, - Solid State Commun., 101, 377 - (1997).

30.Strain effects on InSb phonons in bulk and superlattice layers. M. Siakavellas, Y. S. Raptis, and E. Anastassakis - J. Appl. Phys., 82, 6235-6239 (1997).

31. Pressure Induced Phase Transitions in Spinel and Wurtzite Phases of ZnAl2S4 Compound. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, I. Aksenov and K. Sato - Jpn. J. Appl. Phys., 37, 135-140 (1998).

32. High-pressure Raman scattering study of germanium diselenide. Z. V. Popovic, Z. Jaksic, Y. S. Raptis and E. Anastassakis, - Phys. Rev. B, 57(6), 3418-3422 (1998).

33. Porous Silicon of Variable Porosity under high Hydrostatic Pressure : Raman and Photoluminescence Studies. D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou and G. Kaltsas - phys. stat. sol.(a) 165, 43-48 (1998).

34. Pressure-induced amorphization of germanium diselenide. Z. V. Popovic, Y. S. Raptis, E. Anastassakis, Z. Jaksic - Journal of Non-Crystalline Solids, 227-230, 794-798 (1998).

35.Optical phonons in spin-Peierls compound NaV2O5. Z. V. Popovic, M. J. Konstantinovic, R. Gajic, V. Popov, Y. S. Raptis, A. N. Vasilef, M. Isobe and Y. Ueda - J. Phys. : Condens. Matter 10, L513-L519 (1998).

36. High-pressure studies of photoluminescence in porous silicon, D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou, Phys. Rev. B 58, 14089-14093 (1998).

37. Phase transitions in defect chalcopyrite compounds under hydrostatic pressure. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, A. Anedda, Phys. Rev. B 59, 257-268 (1999).

38. Temperature dependence of Raman scattering and anharmonicity study of MgF2. A. Perakis, E. Sarantopoulou, Y. S. Raptis and C. Raptis, Phys. Rev. B 59, 775-782 (1999).

39. Raman Modes in Porous GaP under Hydrostatic Pressure,, I. M. Tiginyanu, V. V. Ursaki, Y. S. Raptis, V. Stergiou, E. Anastassakis, H. L. Hartnagel, A. Vogt, B. Prevot, C. Schwab, phys. stat. sol. (b) 211, 281-286 (1999).

40. Pressure and temperature-dependent Raman study of YLiF4, E. Sarantopoulou, Y. S. Raptis, E. Zouboulis, and C. Raptis, Phys. Rev. B 59, 4154-4162 (1999).

41. Lattice vibrations in spin-Peierls compound NaV2O5. Z. V. Popovic, M. J. Konstantinovic, R. Gajic, V. Popov, Y. S. Raptis, A. N. Vasilef, M. Isobe and Y. Ueda, Solid State Commun. 110, 381-386 (1999).

42. Parameters influencing the fratness and stability of capasitive pressure sensors fabricated with wafer bonding, D. Goustouridis, D. Tsoukalas, P. Normand, A. G. Kontos, Y. Raptis, E. Anastassakis, Sensors and Actuators A-Physical, 76, 403-408 (1999).

43. High-pressure raman study of SnGeS3, V.C.Stergiou, Y.S.Raptis, Z.V.Popovic, E.Anastassakis, High Pressure Research, 18, 189-194 (2000).

44. Phonon deformation potentials of CdTe, V. C. Stergiou, Y. S. Raptis, E. Sarantopoulou, E. Anastassakis, N. T. Pelekanos, A. Arnoult, S. Tatarenko, K. Saminadayar, High Pressure Research, 18, 101-107 (2000).

45. Raman Study of Elastically strained Bulk and Layered Structures Based on CdTe, V. C. Stergiou, Y. S. Raptis, E. Anastassakis, N. T. Pelekanos, A. Nahmani, and J. Cibert, phys. stat. sol. (b), 223, 237 (2001).

46. Vibrational Properties of SnGeS3 under High Pressure, K. Inoue, V. Stergiou, Y. S. Raptis and Z. V. Popovic, J. Phys. Soc. Japan, 70, 3901-3907 (2001).

47. Influence of Ge implantation on the mechanical properties of polycrystalline silicon microstructures, S. Polymenakos, V. C. Stergiou, A. G. Kontos, C. Tsamis, Y. S. Raptis, D. Tsoukalas, J. Micromechanics and Microengineering, 12, 450-457, (2002).

48. High-pressure Raman study of CaV2O5, Z. V. Popovic, V. Stergiou, Y. S. Raptis, M. J. Konstantinovic, M. Isobe, Y. Ueda, V. V. Moshchalkov, J. Phys.: Condensed Matter, 14, L583-L589, (2002)

49. Epitaxy and structural characterization of ZnSeTe Layers grown on InP substrates, A. G. Kontos, Y. S. Raptis, M. Strassburg, U. W. Pohl, J. of Crystal Growth, 247, 17-22 (2003)

50. Growth and p-type doping of ZnSeTe on InP, M. Strassburg, M. Strassburg, O. Schulz, U. W. Pohl, A. Hoffmann, D. Bimberg, A.G. Kontos, Y. S. Raptis, J. Cryst. Growth, 248, 50-55 (2003).

51. Spectroscopic study of Ce- and Cr-doped LiSrAlF6 crystals, A. G. Kontos, G. Tsaknakis, Y.S. Raptis, and A. Papayannis, E. Landulfo, S. L. Baldochi, E. Barbosa, and N. D. Vieira, Junior, J. Appl. Phys., 93(5), 2979, 2803 (2003).

52. Raman study of nitrogen-doped ZnSSe/GaAs epilayers, A. G. Kontos, Y. S. Raptis, M. Strassburg, U. W. Pohl, D. Bimberg, Thin Solid Films, 428, 185-189 (2003).

53. Piezoelectric effect on the optical phonon modes of strained cubic semoconductors: Case of CdTe quantum wells, V. C. Stergiou, N. T. Pelekanos and Y. S. Raptis, Phys. Rev. B, 67, 165304-(1-15), (2003).

54. Compositional dependence of Raman scattering and photoluminescence emission in CuxGaySe2 thin films, C. Xue, D. Papadimitriou, Y. S. Raptis, N. Esser, W. Richter, S. Siebentritt, M. C. Lux-Steiner, J. Appl. Phys., 94, 4341-4347, (2003).