Announcements to International Conferences

 

1. Remarks on the angular distribution of light scattering from absorbing solid surfaces. E.Anastassakis, A.Anastassiadou and Y.Raptis, XVII European Congress on Molecular Spectroscopy, Madrid, 1985.

2.Raman study of AlSb. Y.S. Raptis and E. Anastassakis, 3rd Intern. Conf. on Phonon Physics, and 6th Intern. Conf. on Phonon Scattering in Condenced Matter, Heidelberg 1989.

3. Second-order Raman scattering near the indirect gap of AlSb. Yannis Raptis and Evangelos Anastassakis, 20th Intern. Conf. on the Physics of Semicond., Thessaloniki 1990.

4. Pressure dependence of zone-boundary phonons of AlSb. Yiannis S. Raptis and K. Syassen, XXIX Annual Scientific Meeting of the Europ. High Press. Research Group, Thessaloniki 1991.

5. Raman study of C60/C70 under pressure. Y.S. Raptis, D.W. Snoke, K. Syassen, S. Roth, P. Bernier and A. Zahab, XXIX Annual Scientific Meeting of the Europ. High Press. Research Group, Thessaloniki 1991.

6. Arsenic passivation of MBE grown GaAs(100): Structural and Electronic properties of the decapped surfaces. U. Resch, N. Esser, Y.S. Raptis, W. Richter, J. Wasserfall, A. Forster and D.I. Westwood, 12th European Conf. of Surface Science, 9-12 September 1991. Stickholm, Sweden.

7. XRD and Raman characterization of GaAs buffer layers grown on SI-GaAs substrates at reduced temperatures. M. Calamiotou, Y.S. Raptis, M. Lagadas, Z. Hatzopoulos and E. Anastassakis, 1st Europ. Symp. on X-ray Topogr. and high resolutiïn diffraction, Marseille 1992.

8. Stabilized Cubic Zirconia : A Raman Study under Uniaxial Stress. J. Cai, Y.S. Raptis and E. Anastassakis, 13th Gener. Conference of the Condenced Matter Division of the Europ. Phys. Society, Regensburg 1993.

9. Raman study of LiYF4, under variable pressure and temperature: observation of a pressure induced phase transition. C. Raptis and Y.S. Raptis, 13th Gener. Conference of the Condenced Matter Division of the Europ. Phys. Society, Regensburg 1993.

10. Growth mode and interface formation of In on GaAs(001) - (2x4). U.Resch, N. Blick, Y. S. Raptis, N. Esser, Th. Werningaus, U. Rossow, W. Richter, 4th International Conference on the Formation of Semiconductor Interfaces, 14-18 June 1993, Julich, Germany.

11. High pressure Raman study of the superionic glass xAgI(1-x)Ag2MoO4. Y.S. Raptis, C. Raptis, E. Kamitsos, G, Chryssikos, I. Kapoutsis, 14th General Conference of the Condenced Matter Division of the European Physical Society, Madrid 1994.

12. Optical studies of Ga2Se3, under variable pressure and temperature. J.Cai, T. Wen, Y.S. Raptis, E. Anastassakis, M. v.d. Emde, Á. Markl, A. Krost, W. Richter, D.R.T. Zahn, 14th General Conference of the Condenced Matter Division of the European Physical Society, Madrid 1994.

13. Luminescence from Silicon Nanostructures fabricated by using conventional Lithographic and Reactive Ion Etching techniques. A.G. Nassiopoulos, S. Grigoropoulos, A. Travlos, S. Ladas, S. Kennou, I. Raptis, D. Papadimitriou, 187th General Meeting of the Electrochemical Society, U.S.A. 1995.

14. Optical studies of ZnSe-ZnS/GaAs(100) Single Quantum Well, V.V. Tishchenko, M.S. Brodin, Y.S. Raptis and E. Anastassakis, 7th International Conference on II-VI Compounds and Devices, Edinburg, 1995

15. Pressure induced phase transition in crystalline ZnAl2S4 ,V.V. Ursaki, Y.S. Raptis, I.M. Tiginyanu, E. Anastassakis, I.I. Burlakov, N.A. Moldovyan, 10th International Conference on Ternary and Multinary Compounds, Stuttgart 1995.

16. Study of elastically strained porous silicon for potential use in micro-IR-sensors. D. Papadimitriou, Y.S. Raptis, E. Anastassakis, 15th General Conf. of the Condenced Matter Division of the European Physical Society, Baveno 1996, Italy.

17. Laser induced fluorescence as a diagnostic tool in atherosclerosis, N. Anastassopoulou, B. Arapoglou, P. Demakakos, M. Makropoulou, A. Paphiti, Y. S. Raptis, A. A. Serafetinides, Ninth International School on Quantum Electronics : Lasers - Physics and Applications, Varna, BULGARIA, September 1996, Proceedings SPIE, 3052, 394 (1996).

18. Interface roughness and confined LO phonon modes in (ZnSe)2(ZnS)11/GaAs(100) superlattices grown by PAVPE, V. V. Tishchenko, Y. S. Raptis, E. Anastassakis, Internationa Conference on Optical Diagnosis of Materials and Devices for Opto- Micro- and Quantum Electronics (OPTDIM-97), Kiev, UKRAINE, 13-15 May, 1997. SPIE Proceed. -“Int. Conf. on Optical Diagnostics of Materials and Devices for Opto-, Micro- and Quantum Electronics - OPTDIM’97”, 13-15 May 1997, Kyiv, Ukraine, p. 346-350.

19. Pressure-induced amorphization of germanium diselenide. Z. V. Popovic, Y. S. Raptis, E. Anastassakis, Z. Jaksic, 17th Internationsl Conference on Amorphous and Microcrystalline Semiconductors (ICAMS-17), Budapest HUNGARY, 25-29 August 1997.

20. Porous Silicon of Variable Porosity under high Hydrostatic Pressure : Raman and Photoluminescence Studies. D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou and G. Kaltsas, 2nd Int. Workshop on Light Emitting Low Dimensional Si-structures, Lagonissi Attiki, June 1997.

21. Raman scattering study of pressure-induced phase transition in ZnAl2(1-X)Ga2xS4. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, A. Anedda and A. Serpi, 11th Int. Conf. on Ternary and Multinary Compounds, ICTMC-11, Salford, 8-12, September 1997, Proceedings : Inst. Phys. Conf. Ser. No 152 : Section D: Optical and Electrical Properties, p. 605-608, IOP Publ. Ltd, 1998.

22. Raman Modes in Porous GaP under Hydrostatic Pressure,, I. M. Tiginyanu, V. V. Ursaki, Y. S. Raptis, V. Stergiou, E. Anastassakis, H. L. Hartnagel, A. Vogt, B. Prevot, C. Schwab, VIIIth Int. Conf. on High Pressure Semiconductor Physics, Thessaloniki, Greece, 9-13 August, 1998.

23. Raman study of ZnAl2(1-x)Ga2xS4 (x=0.1, 0.2, 0.4), under repeated Hydrostatic-Pressure Cycles,Y. S. Raptis, E. Anastassakis, V. V. Ursaki and I. M. Tiginyanu, XVIth Int. Conf. on Raman Spectroscopy, (ICORS-16), Cape Town, 1998, Ed. A.M. Heyns, John Wiley &Sons, Chichester 1998.

24. Raman study of ZnWO4 under variable Pressure and Temperature, A. Perakis, E. Sarantopoulou, Y. S. Raptis and C. Raptis, XVIth Int. Conf. on Raman Spectroscopy, (ICORS-16), Cape Town, 1998.

25. Parameters influencing the fratness and stability of capasitive pressure sensors fabricated with wafer bonding, D. Goustouridis, D. Tsoukalas, P. Normand, A. G. Kontos and E. Anastassakis,, Eurosensors XI, 1998.

26. Laser excited autofluorescence for discrimination of atherosclerosis, M. Makropoulou, H. Drakaki, N. Anastassopoulou, Y.S. Raptis. A. A. Serafetinides, A. Pafiti, B. Tsiligris, B. Arapoglou and P. Demakakos, Proceedings of Medical Applications of Lasers in Dermatology, Cardiology, Ophthalmology, and Dentistry II, 12-15 Sept. 1998, Stockholm, Sweden, SPIE, 3564, 68-75 (1999).

27. High-pressure raman study of SnGeS3, V.C.Stergiou, Y.S.Raptis, Z.V.Popovic, E.Anastassakis, XXXVII Meeting of the European High Pressure Research Group, Montpellier, 9-11 September 1999.

28. Phonon deformation potentials of CdTe, V. C. Stergiou, Y. S. Raptis, E. Sarantopoulou, E. Anastassakis, N. T. Pelekanos, A. Arnoult, S. Tatarenko, K. Saminadayar, XXXVII Meeting of the European High Pressure Research Group, Montpellier, 9-11 September 1999.

29. Raman Study of Elastically Strained Bulk and Layered Structures based on CdTe, V. C. Stergiou, Y. S. Raptis, E. Anastassakis, N. T. Pelekanos, A. Nahmani, J. Cibert, 9th High Pressure Semiconductor Physics, Sapporo, 24-28 September, 2000.

30. Influence of Ge Implantation on the Mechanical Properties of Polycrystalline Silicon Microstructures, S. Polymenakos, V. C. Stergiou, A. G. Kontos, Chr. Tsamis, Y. S. Raptis, D. Tsoukalas, 12th Micro Mechanics Europe, Cork, Ireland, 16 September 2001.

31. Strain Characterization, by Raman Spectroscopy, of Epitaxially Grown Superlattices. M. Siakavellas, A. G. Kontos and Y. S. Raptis, NATO Advanced Research Workshop On Atomistic Aspects of Epitaxial Growth, Corfu, 25-30 June, 2001.

32. Raman study of nitrogen-doped ZnSSe/GaAs epilayers, A.G. Kontos, Y.S. Raptis, M. Straßburg, U.W. Pohl, D. Bimberg, E-MRS 2002 Spring Meeting, Strasburg, June 18-21, 2002.