Κατάλογος Ετερο-αναφορών, σύμφωνα με το
Science Citation Index,στο δημοσιευμένο έργο του Ιωάννη Σ. Ράπτη, Αναπλ. Καθηγητή ΕΜΠ
(Δεκέμβριος 2001)
1. Effects of temperature gradients on the first-order Raman spectrum of Si. J. .Raptis, E. Liarokapis, and E. Anastassakis - Appl. Phys. Lett. 44, 125-127 (1984).
H. Shen, P. Soc. Photo., 524, 118 (1985).
I. Suzuki, J. Mol. Structure (b), 132, 1 (1985).
G. Irmer, phys. stat. solidi (b), 136, 481 (1986).
F. Maguotta, Appl. Phys. Lett., 48, 195 (1986).
Z. Hang, J. Appl. Phys., 64, 3233 (1988).
S. Nakashima, IEEE J. Quant. Electr., 25, 965 (1989).
G. D. Pazionis, IEEE J. Quant. Electr., 25, 976 (1989).
A. Perezrodriguez et al. J. Appl. Phys., 70, 1678 (1991).
L.Holz et al., J. Appl. Phys., 72, 2472 (1992).
H. Tang et al., J. Appl. Phys., 71, 3492 (1992).
A. Jesemjonow et al., Phys.Stat.Solidi B, 171, 505 (1992).
E.D. Obraztsova et al.,J.Elec.Spec.&Rel.Phenom., 64-5, 857 (1993).
A. Perezrodriguez et al., Thin Solid Films, 251, 45 (1994).
L. Holz, Appl. Phys. A, 61, 171 (1995).
G. Lucazeau et al., J. Mater. Research, 12, 2262 (1997)
F. A. Houle et al., Appl. Phys. A–Mater. Scien. & Process., 66, 143 (1998)
2. Angular dispersion of "backward" Raman scattering: Weakly absorbing cubic materials (Si). E.Anastassakis and Y.S.Raptis-J.Appl.Phys. 57, 920-928 (1985)
A. C. Dewilton, J. El.Chem. Soc., 135, 988 (1986).
J. C. Tsang, J. Appl. Phys., 66, 233 (1989).
H. Tang, I.P. Herman, Phys. Rev. B, 43, 2299 (1991).
H. Tang et al., J. Appl. Phys., 71, 3492 (1992).
A. Jesemjonow et al., Phys.Stat.Solidi B, 171, 505 (1992).
A. Jesemjonow et al., Phys.Stat.Solidi B, 267, 147 (1992).
J.A. Kash et al., Topics in Appl. Phys., 68, 423 (1991).
G. Irmer, J. Appl. Phys., 76, 7768 (1994).
I. Gregora, Thin Solid Films, 255, 139 (1995).
G. H. Loechelt et al., J. Appl. Phys., 86, 6164 (1999)
3. Temperature rise induced by a cw laser beam revisited. E.Liarokapis and Y.S.Raptis - J. Appl. Phys. 57, 5123-5126 (1985).
D. Gmidotti, Appl. Phys. Lett., 47, 1336 (1985).
C. P. Grigorop, J. Appl. Phys., 60, 2304 (1986).
D. Wood, Radiat. Effect, 102, 69 (1987).
D. Gmidotti, Appl. Phys. Lett., 50, 912 (1987).
I. Heresi, Superlatt. M., 3, 409 (1987).
D. Gmidotti, Phys. Rev. B 38, 1569 (1988).
Mya Raja, Appl. Phys. Lett., 52, 625 (1988).
D. C. Skaby, J. Appl. Phys., 63, 198 (1988).
C. V. Treyz, J. Vac. Sci. B, 6, 37 (1988).
S. Affrossm, Appl. Phys. (A), 49, 533 (1989).
C.I.H Ashby, Thin Solid Films, 218, 252 (1992).
K. Brunner et el., Surface Science, 267, 218 (1992).
P. Baumgartner et al., Appl. Phys. Lett., 66, 751 (1995).
A. Kar et al., Opt. Quant. Electronics, 27, 1165 (1995)
G. Lucazeau et al., J. Mater. Research, 12, 2262 (1997)
C. Engel et al., J. Appl. Phys., 81, 6455 (1997)
F. A. Houle et al., Appl. Phys. A–Mater. Scien. & Process., 66, 143 (1998)
H. Sha et al., Int. J. of Heat and Mass Transfer, 41, 3265 (1998)
Huber M, et al. APPL SURF SCI 168 (1-4): 204-207 DEC 15 2000
4. Raman and Infrared Spectra of Tellurium Sub-Bromide (Te2Br). E. Anastassakis, J. S. Raptis, and W. Richter - phys. stat. sol.(b) 130, 161-168 (1985).
A. A. Valkov, Fiz. Tverd. T., 29, 3461 (1987).
5.Angular dispersion of "backward" Raman scattering: Absorbing cubic materials (Ge). A. Anastassiadou, Y .S. Raptis, and E. Anastassakis - J. Appl. Phys.59, 627-631 (1986).
J. C. Tsang, J. Appl. Phys., 66, 233 (1989).
J.A. Kash, Topics in Appl. Phys, 68, 423 (1991).
G. Irmer, J. Appl. Phys., 76, 7768 (1994).
G. H. Loechelt et al., J. Appl. Phys., 86, 6164 (1999)
6.Angular dispersion of "backward" Raman scattering: Absorbing III-V semiconductors (GaAs). A.Anastassiadou,Y.S.Raptis,and E.Anastassakis - J. Appl. Phys. 60, 2924-2931 (1986).
G. R. Schwartz, Superalatt. M., 3, 523 (1987).
Vorlicek, J. Phys. Chem. Solids, 19, 797 (1988).
Zekeng, phys. stat. solidi (b), 150, 65 (1988).
G.P. Schwartz et al. J. Crystal Growth, 102, 147 (1990).
A.M. Mintairov at al. Sov. Phys. Semic.-USSR, , 962 (1990).
A. M. Mintairo, Sov. Phys. S E R, 24, 962 (1990).
A.M. Mintairov et al., Sov.Phys.Semicond.-USSR, 26, 347 (1992).
R. Yakimova et al., J. Crystal Growth, 123, 143 (1993).
G. Attolini et al., J. Appl. Phys., 71, 4156 (1994).
A.M. Mintairov et al., Semiconductors, 28, 866 (1994).
S. Gennari et al., Sol.State Communications, 90, 291 (1994).
G. Irmer, J. Appl. Phys., 76, 7768 (1994).
I. Gregora, Thin Solid Films, 255, 139 (1995).
U. Vorlicek et al., J. Appl. Phys., 82, 5484 (1997)
P. Puech et al., J. Appl. Phys., 82, 4493 (1997)
J. W. Lee et al., J. Cryst. Growth, 172, 53 (1997)
A. M. Mintairov et al., Phys. Rev.B, 55, 5117 (1997)
J. Groenen et al., Phys. Rev. B, 58, 10452 (1998)
A. M. Mintairov et al., Phys. Rev. B, 56, 15836 (1997)
7. Raman study of SrF2 under uniaxial Stress. A. D. Papadopoulos, Y. S. Raptis and E. Anastassakis - Solid State Communications, 58, 645-648 (1986).
G. A. Kourouklis, Phys. Rev. B, 34, 1233 (1986)
P. Wickbold, Phys. Rev. B, 35, 1362 (1987).
I. Suzuki, J. Mol. Struct., 171, 1 (1987).
8. Anharmonic effects in Mg2X (X=Si,Ge,Sn) compounds studied by Raman spectroscopny. Y S. Raptis, G. A. Kourouklis, E. Anastassakis, E. Haro-Poniatowski and M.Balkanski, - J. Physique, 48, 239-245 (1987).
P. Wickbold, Phys. Rev. B, 35, 1362 (1987).
K. Nishidate et al., J.of Phys.-Conden. Matter, 5, 4855 (1993).
J. Suda et al., J. Phys. Soc. Jap., 67, 20 (1998)
9. Raman and infrared phonon piezospectroscopy in InP. E. Anastassakis and Y.S. Raptis, M. Hunermann and W. Richter, and M. Cardona - Phys. Rev. B38, 7702-7709 (1988).
B. Jusserand, J. Appl. Phys., 66, 49 (1989).
F. H. Pollak, Phys. Rev. B, 38, 702 (1989).
F.H. Pollak, Semiconduc.&Seminetals, 32, 17 (1990).
M.I. Alonso et al., Phys. Rev. B, 45, 9054 (1992).
M. Cardona and G. Gunthrodt, Topics in Appl. Phys., 68, 1 (1991)
S. Rath et al., PRAMANA-Journ.of Phys., 41, 21 (1993).
C.A. Tran et al., J. Appl. Phys., 74, 4983 (1993).
H. Lee et al., J. Appl. Phys., 75, 5040 (1994).
A.K. Ramdas, Semiconduc. & Semimetals, 36, 137 (1992).
H. Lee et al., Appl. Phys. Lett., 68, 3153 (1996)
W. Trzeciakowski et al., Acta Phys. Polonika A, 92, 1033 (1997)
H. Lee, Thin Solid Films, 313, 167 (1998)
B. Boudont et al., Appl. Phys. Lett., 74, 3221 (1999)
B. Boudont et al., J. Raman Spectr., 30, 715 (1999)
L. Arbus, Phys. Rev. B, 60, 5486 (1999)
S. Reich et al., phys. stat. solidi (b), 215, 419 (1999)
Ibanez J, et al, PHYS STATUS SOLIDI B 223 (3): 715-722 FEB 2001
Groenen J, et al., PHYS REV B 60 (23): 16013-16017 DEC 15 1999
10. Tempereture dependence of long-wavelength optical phonons in AlSb. Y.S. Raptis and E. Anastassakis - Solid State Commun. 76, 335-338(1990).
S.S. Bedi et al., J.of Phys.&Chem.of Solids, 54, 371 (1993).
K. Wakamura, J.of Phys.&Chem.of Solids, 54, 387 (1993).
12. Short-range order and microstructure in hydrogenated amorphous silicon. P. Danesh, B. Pantchev, I. Savatinova, E. Liarokapis and Y.S. Raptis - J. Appl. Phys. 69, 7656-7659 (1991).
D. Caputo et al., J.Non-Cryst. Solids, 170, 228 (1994).
13. Vibrational modes, optical excitations, and phase transition of solid C60 at high pressures. D.W. Snoke, Y.S. Raptis, and K. Syassen - Phys. Rev. B45, 14419-14422 (1992).
M.N. Regueiro et al., Phys. Rev. B, 46, 9903 (1992).
G. Bocquillon et al., J.of Physical Chem. 97, 12924 (1993).
S.V. Kozyrev et al., Semiconductors, 27, 777 (1993).
K. Kamaras et al., Appl. Phys.A-Sol.&Surf., 56, 231 (1993).
P.R. Birkell et al., Chemical Phys. Lett., 205, 399 (1993).
R.A. Jishi et al., Phys. Rev. B, 48, 5634 (1993).
K.A. Wang et al., Phys. Rev. B, 48, 3501 (1993).
L. Zeger et al., Phys. Rev. Lett., 70, 2920 (1993).
K. Kamaras et al., Synthetic Metals, 56, 3021 (1993).
H. Yamawaki et al., J.of Physical Chem., 97, 11161 (1993).
M.S. Dresselhaus et al., J.of Material Research, 8, 2054 (1993).
H.A. Ludwig et al., Z. fur Physik B-Cond. Mat. 96, 179 (1994).
H. Hirai et al., Chemical Phys. Lett., 226, 595 (1994).
A.P. Jephcoat et al., Europh. Lett., 25, 429 (1994).
M. Ata et al., J.of Physical Chem., 98, 9960 (1994).
I.O. Bashkin et al., J. Phus.-Cond. Matter, 6, 7491 (1994).
I.O. Bashkin et al., JETP Lettl., 59, 279 (1994).
A.K. Sood et al., Phil. Mag. B, 70, 347 (1994).
J. Yu et al., Phys. Rev. B, 49, 5008 (1994).
J. Haines et al., Solid State Communications, 90, 361 (1994).
B.C. Hess, Phys. Rev. B, 50, 4871 (1994).
K.D. Shiang, J. Of Chemical Phys., 99, 9994 (1993).
N. Chandrabhas et al., Phys. Rev. Lett., 73, 3411 (1994).
T.T.M. Palstra et al., Sol. Stat. Communic., 93, 327 (1995).
V. D. Blank, New J. Chem. 19, 253 (1995)
V. D. Blank, Phys. Lett. A, 205, 208 (1995)
V. V. Brazhkin, JETP Letter, 62, 350 (1995)
G. X. Cheng, Chin. Phys. Lett. 12, 207 (1995)
B. C. Hess, Mol. Cryst. A, 256, 775 (1995)
H. Hirai, Phys. Rev. B 51, 5555 (1995)
A. Kokorevi, Chem. Lett. 243, 205 (1995)
K. P. Meletov, Chem. Lett. 236, 265 (1995)
K. P. Meletov, Phys. Rev. B 52, 90 (1995)
O. Zhou, Phys. Rev. B 52, 483 (1995)
U. D. Venkateswaran et al. phys. stat sol.(b), 198, 545 (1996)
K. P. Meletov, phy. stat. sol.(b), 198, 553 (1996)
U. D. Blank et al., Phys. Lett. A, 220, 149 (1996)
J. Diederich et al., Phys. Rev. B, 54, R9662 (1996)
H. Szwarc et al., Synthetic Metals, 77, 265 (1996)
M. S. Dresselhauss et al., J. Raman Spectr., 27, 351 (1996)
S. M. Sharma et al., Progr. In Mater. Scien., 40, 1 (1996)
J. H. Weaver, Sol. Stat. Phys. Adv. In Resear. & Appl. 48, 1 (1994)
V. V. Brazhkin et al., 166, 893 (1996
V. V. Brazhkin et al., Phys. Rev. B, 56Έ11465 (1997)
K. P. Meletov et al., J. Exper. Theor. Phys., 84, 144 (1997)
P. Milani, Rev. Nuovo Cim., 12, 1 (1996)
A. M. Naletov et al., Uspekhi Fiz. Nauk., 167, 1019 (1997)
R. Rao et al., Chem Phys. Lett.,
U. P. Venkateswaram, Phys. Rev. B, 59, 10928 (1999)
S. Okada et al., Phys. Rev. Lett., 83, 1986 (1999)
A. K. Sood, phys. stat. solidi (b), 215, 393 (1999)
G. Kourouklis et al., Physics B, 265, 216 (1999)
W. I. Afanasyeva, Surface and Interface Analysis, 27, 213 (1999)
B. Sundqvist, Adv. In Phys., 48, 1-134 (1999)
Hemley RJ, et al., REV MINERAL GEOCHEM 41: 335-419 2000
Sakai M, et al., PHYS REV B 6403 (3): 3413-+ JUL 15 2001
Sharma SM, et al., PHYS REV B 6320 (20): 5417-+ MAY 15 2001
Rao CNR, et al., CHEMPHYSCHEM 2 (2): 78-105 FEB 16 2001
Ichida M, et al., SOLID STATE COMMUN 118 (3): 119-122 2001
Vijayakumar V, et al., J PHYS-CONDENS MAT 13 (9): 1961-1972 MAR 5 2001
Sundqvist B , PHYS STATUS SOLIDI B 223 (2): 469-477 JAN 2001
Shekar NVC, et al., B MATER SCI 24 (1): 1-21 FEB 2001
Meletov KP, et al. PHYS REV B 6305 (5): 4106-+ FEB 1 2001
Vijayakumar V, et al., CHEM PHYS LETT 330 (3-4): 275-280 NOV 10 2000
Bao ZX, et al., CHINESE PHYS 9 (9): 676-679 SEP 2000
Fujiki S, et al., PHYS REV B 62 (9): 5366-5369 SEP 1 2000
Kolomiets LL, et al., POWDER METALL MET C+ 38 (9-10): 488-492 SEP-OCT 1999
Zhou WY, et al.,J PHYS CHEM SOLIDS 61 (7): 1165-1169 JUL 2000
Rao RH, et al., J CHEM PHYS 112 (15): 6739-6744 APR 15 2000
Wasa S, et al., SOLID STATE COMMUN 114 (4): 209-213 2000
Teredesai et al., CHEM PHYS LETT 319 (3-4): 296-302 MAR 17 2000
14. Arsenic passivation of MBE grown GaAs(100):structural and electronic properties of the decapped surfaces. U. Resch, N. Esser, Y.S. Raptis, W. Richter, J. Wasserfall, A. Foster and D.I. Westwood - Surface Science 269/270, 797-803 (1992).
Y.Q. Cai et al., J.of Electr.Spectr.&Related Phenom., 61, 275 (1993).
E. Gu et al., J.of Magnetism and Magnetic Mater., 126, 180 (1993).
G.E. Mcquire et al., Analytical Chemistry, 65, R311 (1993).
J. Geurtz, Surfece Science Reports, 18, 1 (1993).
W. Storm et al., J. Vac. Sci.& Technol. B, 12, 147 (1994).
U. Reschesse et al., Surf. Sci., 309, 597 (1994).
M. Arens, Phys. Rev. B 51, 923 (1995)
E. Gu et al., Phys. Rev. B, 51, 3596 (1995)
A. Markl, Surf. Science 333, 631 (1995)
J. F. McGilp, Progr. Surf. Sci., 49, 1 (1995)
D. Drews, Appl. Surf. Scien., 104, 485 (1996)
D. Drews, J. Cryst. Growth, 159, 152 (1996)
A. Schneider et al., J. Cryst. Growth, 159, 732 (1996)
G. Scherb, Appl. Phys. Lett., 71, 2990 (1997)
D. R. T. Zahn, Fresenius J. Anal. Chemistry, 358, 10 (1997)
T. Hannappel et al., Appl. Phys. A-Mater. Scien. & Proc., 69, 427 (1999)
L. N. Bolotor et al., Surfece & Interface Analysis, 27, 533 (1999)
P. Bond et al., Surface Science, 418, 181 (1998)
Yamauchi T, et al., APPL PHYS LETT 79 (15): 2465-2467 OCT 8 2001
Yamauchi T, et al., JPN J APPL PHYS 1 40 (3B): 2069-2072 MAR 2001
Yamauchi et al., APPL PHYS LETT 77 (26): 4368-4370 DEC 25 2000
16. Raman study of C60/C70 under pressure. Y. S. Raptis, D.W. Snoke, K. Syassen, S. Roth, P. Bernier and A. Zahab - High Pressure Research, 9/10, 41-46 (1992).
J.H. Nguyen, Sol. State Communications, 88, 719 (1993).
J. Yu et al., Phys. Rev. B, 49, 5008 (1994).
J. Haines et al., Solid State Communications, 90, 361 (1994).
N. Chandrabhas et al., Phys. Rev. Lett., 73, 3411 (1994).
K.D. Shiang, J. of Chemical Phys., 99, 9994 (1993).
A.K. Sood et al., Phil. Mag. B, 70, 347 (1994).
V. Blank et al., Physics Lett. A, 188, 281 (1994).
H. Szwarc et al., Synthetic Metals, 77, 265 (1996)
M. S. Dresselhauss et al., J. Raman Spectr., 27, 351 (1996)
S. M. Sharma et al., Progr. In Mater. Scien., 40, 1 (1996)
B. Sundqvist, Adv. In Phys., 48, 1-134 (1999)
V.D. Blank, New J. Chem., 19, 253 (1995)
Wasa S, et al., SOLID STATE COMMUN 114 (4): 209-213 2000
17. Second-order Raman scattering in AlSb. Y.S. Raptis, E. Anastassakis and G. Kanellis - Phys. Rev. B, 46, 15801-15811 (1992).
J. Wagner et al., Material Science and Engineering B -
Solid State Materials for Advanced Techn., 21, 262 (1993).
J. Wagner et al., Phys. Rev. B, 49, 7295 (1994).
T. Azuhata et al., J.of Phys.-Cond. Matt., 7, 1949 (1995).
S. W. Dasilva et al., J. Appl. Phys., 80, 597 (1996)
W. Winld et al. Phys. Rev. B, 54, 8580 (1996)
P. K. Jha et al., Praman-J. of Phys., 49, 547 (1997)
H. C. Lin et al., Sol. Stat. Commun., 107, 547 (1998)
A. Milekhin et al., European Physical J. B, 6, 295 (1998)
18. Stabilized Cubic Zirconia: A Raman Study under Uniaxial Stress. Jinguang Cai,Y. S. Raptis and E. Anastassakis - Appl. Phys. Letters, 62, 2781 (1993).
Bouvier P, et al., J PHYS CHEM SOLIDS 61 (4): 569-578 APR 2000
Zeng L, et al., CHIN J INORG CHEM 15 (4): 475-481 JUL 1999
19. XRD and Raman studies of low-temperature-grown GaAs epilayers. M. Calamiotou, Y.S. Raptis and E. Anastassakis, M. Lagadas and Z. Hatzopoulos - Solid State Commun, 87, 563 (1993).
M. Tani et al., Jap. J. of Appl. Phys.(part1), 33(9A), 4807 (1994).
P.S. Pizani et al., Appl. Phys. Lett., 66, 1927 (1995).
H. Abe et al., Jpn. J. Appl. Phys., 35, 5955 (1996).
H. Abe et al., Jap. J. Appl. Phys., 36, 623 (1997)
H. Abe et al., Jap. J. Appl. Phys., 35, 5955 (1966)
E. K. Koh et al., Phys. Rev. B, 57, 11919 (1998)
M. Toufella, J. Appl. Phys., 85, 2929 (1999)
Puech P, et al., J PHYS-CONDENS MAT 12 (13): 2895-2902 APR 3 2000
20. Temperature dependence of Raman scattering in Stabilized Cubic Zirconia. J. Cai, C. Raptis, Y.S. Raptis, E. Anastassakis - Phys. Rev. B 51, 201-210 (1995).
Yang XC, et al., SCRIPTA MATER 45 (4): 435-440 AUG 31 2001
Maslar et al., J NUCL MATER 298 (3): 239-247 OCT 2001
Glerup M, et al., J SOLID STATE CHEM 160 (1): 25-32 AUG 2001
Morterra C, et al., CATAL LETT 73 (2-4): 113-119 2001
Canton P, et al., CHEM MATER 13 (5): 1634-1641 MAY 2001
Bouvier P, et al., PHYS REV B 62 (13): 8731-8737 OCT 1 2000
Fabris S, et al., PHYS REV B 61 (10): 6617-6630 MAR 1 2000
Salas P, et al., MATER RES INNOV 3 (4): 205-211 MAR 2000
Bouvier P, at al., J PHYS CHEM SOLIDS 61 (4): 569-578 APR 2000
21. Folded phonons from lateral periodicity in (311) GaAs/AlAs corrugated superlattices. Z.V. Popovic, M.B. Vukmirovic, and Y.S. Raptis, E. Anastassakis, R. Notzel, K. Ploog - Phys. Rev. B 52 (8), 5789-94 (1995).
W. Langbein et al., Phys. Rev. B 54, 10784 (1996)
V. A. Volodin et al., JETP Letters, 66, 47 (1997)
D. Luersen et al., Phys. Rev. B, 57, 1631 (1998)
V. A. Volodin, Superlattices and Microstructures, 26, 11 (1999)
Ledentsov NN, et al., J ELECTRON MATER 30 (5): 463-470 MAY 2001
Volodin VA, et al., SEMICONDUCTORS+ 34 (1): 61-66 2000
22. Optical Studies of ZnSe-Zns/GaAs(100) Single Quantum Wells grown by Photo-assisted Vapur Phase Epiraxy. V.V. Tishchenko, Y.S. Raptis, and E. Anasstassakis, N.V. Bondar - Solid State Communications, 96 (10), 793-98 (1995).
R. Gingolani et al., Appl. Phys. Lett., 70, 2943 (1997)
A. J. Semjonow, J. Phys.-Cond. Matter., 11, 1735 (1999)
23. Interference patterns under normal incidence in birefringent, optically active plane parallel plates, T.D. Wen, Y.S. Raptis, E. Anastassakis, I.J. Lalov, A.I. Miteva - J. Phys. D : Appl. Phys., 28, 2128-34 (1995).
Hernandez-Rodriguez C, et al., J PHYS D APPL PHYS 33 (22): 2985-2994 NOV 21 2000
24. Surface-related phonon mode in porous GaP. I.M. Tiginyanu and V.V. Ursaki, V.A. Karavanskii and V.N. Sokolov, and Y.S. Raptis and E. Anastassakis - Solid State Communications, 97, 675-678 (1996).
A. G. Cullis et al., J. Appl. Phys., 82, 909 (1997)
D. Vanmaekelbergh, J. Phys. Chem., 102, 7997 (1998)
K. Kuriyama et al., Phys. Rev. B, 58, 1103 (1998)
V. N. Denisov et al., Phys. Lett. A, 259, 62 (1999)
Schmuki P, et al., PHYS STATUS SOLIDI A 182 (1): 51-61 NOV 2000
28. Interference patterns under oblique incidence in birefringent optically active plane-parallel plates. A.I. Miteva, I.J. Lalov, T. Wen, Y.S. Raptis and E. Anastassakis - J. Phys. D : Appl. Phys. 29, 2705-2713 (1996).
Hernandez-Rodriguez C et al., J PHYS D APPL PHYS 33 (22): 2985-2994 NOV 21 2000
29. Order-disorder phase transition in CdAl2S4 under hydrostatic pressure. I. I. Burlakov, Y. S. Raptis, V.V. Ursaki, E. Anastassakis and I.M. Tiginyanu, - Solid State Commun., 101, 377 - (1997).
S. Koh et al., J. Kor. Phys. Society, 31, 681 (1997)
A. Eifler et al., J. Phys.-Cond. Matter.m 11, 4821 (1999)
Choe SH, et al., J MATER RES 15 (12): 2690-2694 DEC 2000
Hyun SC, et al. J KOREAN PHYS SOC 37 (3): 295-299 SEP 2000
30.Strain effects on InSb phonons in bulk and superlattice layers. M. Siakavellas, Y. S. Raptis, and E. Anastassakis - J. Appl. Phys., 82, 6235-6239 (1997).
S. Reich et al., phys. stat. solidi (b), 215, 419 (1999)
31. Pressure Induced Phase Transitions in Spinel and Wurtzite Phases of ZnAl2S4 Compound. V. V. Ursaki, I. I. Burlakov, I. M. Tiginyanu, Y. S. Raptis, E. Anastassakis, I. Aksenov and K. Sato - Jpn. J. Appl. Phys., 37, 135-140 (1998).
Choe SH, et al., J MATER RES 15 (12): 2690-2694 DEC 2000
Hyun SC, et al., J KOREAN PHYS SOC 37 (3): 295-299 SEP 2000
Arora AK , SOLID STATE COMMUN 115 (12): 665-668 2000
32. High-pressure Raman scattering study of germanium diselenide. Z. V. Popovic, Z. Jaksic, Y. S. Raptis and E. Anastassakis, - Phys. Rev. B, 57(6), 3418-3422 (1998).
A. Grzechnik, J. Solid State Chem., 141, 248 (1998)
T. Grande, J. Sol. Stat. Chem., 145, 167 (1999
Grzechnik A, et al., J SOLID STATE CHEM 150 (1): 121-127 FEB 15 2000
33. Porous Silicon of Variable Porosity under high Hydrostatic Pressure : Raman and Photoluminescence Studies. D. Papadimitriou, Y. S. Raptis, A. G. Nassiopoulou and G. Kaltsas - phys. stat. sol.(a) 165, 43-48 (1998).
Wang ST, et al., PHYS STATUS SOLIDI A 182 (1): 359-362 NOV 2000
Ramachandran GK, et al., J PHYS-CONDENS MAT 12 (17): 4013-4020 MAY 1 2000
Agarwal V, et al., THIN SOLID FILMS 358 (1-2): 196-201 JAN 10 2000
34. Pressure-induced amorphization of germanium diselenide. Z. V. Popovic, Y. S. Raptis, E. Anastassakis, Z. Jaksic - Journal of Non-Crystalline Solids, 227-230, 794-798 (1998).
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